Single-channel isolated gate driver IC for driving IGBTs, silicon MOSFETs, and SiC MOSFETs. It provides separate source and sink outputs with typical peak currents of 6 A source and 6.5 A sink, 40 ns typical propagation delay, and common-mode transient immunity greater than 300 kV/µs. The device uses a coreless transformer isolation barrier rated to 3.0 kVrms for 1 minute under UL 1577 and operates with a 3.0 V to 15 V input-side supply and a 12.35 V to 32 V output-side supply for this variant. It is specified for -40 °C to 125 °C ambient operation and is offered in the PG-DSO-8-72 narrow-body SOIC-8 package.
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Infineon 1ED3141MU12F technical specifications.
| Channels | 1 |
| Isolation type | Coreless transformer galvanic isolation |
| Output configuration | Separate source and sink outputs |
| High-side peak output current | 6A |
| Low-side peak output current | 6.5A |
| Propagation delay | 40ns |
| Part-to-part skew | 7ns |
| Common-mode transient immunity | >300kV/µs |
| Input-side supply voltage | 3.0 to 15V |
| Output-side supply voltage | 12.35 to 32V |
| Input UVLO threshold on | 2.86V |
| Input UVLO threshold off | 2.66V |
| Output UVLO threshold on | 12V |
| Output UVLO threshold off | 11.05V |
| Maximum output supply voltage | 35V |
| Rise time | 20ns |
| Fall time | 20ns |
| Ambient operating temperature | -40 to 125°C |
| Isolation withstand voltage | 3.0kVrms |
| Package | PG-DSO-8-72 / PG-DSO-8 |
| RoHS Compliant | Yes |
| Lead-free | Yes |
| Halogen Free | Yes |
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