This single-channel isolated gate driver is designed to drive IGBTs, silicon MOSFETs, and SiC MOSFETs. The 1ED3142MU12F provides separate source and sink outputs with 6 A typical source current and 6.5 A typical sink current, a typical 40 ns propagation delay, and 7 ns part-to-part skew. It operates from a 3.0 V to 15 V input supply and a 14 V to 32 V output supply, with output-side UVLO thresholds tailored for the 1ED3142 variant. The device supports operation from -40 °C to 125 °C ambient, offers common-mode transient immunity above 300 kV/µs, and includes active shutdown, short-circuit clamping, and overtemperature protection in a PG-DSO-8 150 mil package.
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Infineon 1ED3142MU12F technical specifications.
| Channel Count | 1 |
| Isolation Technology | Coreless transformer |
| Input-to-Output Offset Voltage | 2300V |
| Peak Source Current | 6A |
| Peak Sink Current | 6.5A |
| Propagation Delay | 40ns |
| Part-to-Part Skew | 7ns |
| Input Supply Voltage | 3 to 15V |
| Output Supply Voltage | 14 to 32V |
| Output UVLO Threshold On | 14V |
| Output UVLO Threshold Off | 12.55V |
| Common-Mode Transient Immunity | >300kV/µs |
| Ambient Operating Temperature | -40 to 125°C |
| UL 1577 Isolation Withstand Voltage | 3000Vrms |
| Package | PG-DSO-8 (150 mil) |
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