1ED3431MU12M

This single-channel isolated gate driver is designed for driving 650 V, 1200 V, 1700 V, and 2300 V IGBTs as well as SiC and Si MOSFETs. It provides 5.7 kVrms isolation, a 40 V absolute maximum output supply rating, and typical peak gate-drive capability of 3.8 A source and 2.5 A sink. The device integrates adjustable DESAT protection, adjustable soft turn-off, undervoltage lockout on the input and output sides, and active Miller clamp functionality. It supports 3.3 V or 5 V input-side supply operation, tolerates ambient temperatures up to 125 °C, and uses a PG-DSO-16 fine-pitch package with creepage distance greater than 8 mm. High common-mode transient immunity of 200 kV/µs and tight propagation-delay matching support robust high-speed power-switching applications.