This device is a galvanically isolated single-channel gate driver IC for IGBTs, SiC MOSFETs, and Si MOSFETs. It provides a typical 3 A peak source and sink output, an I2C-configurable DESAT function, soft turn-off, UVLO, active Miller clamp, and optional two-level turn-off. The driver is housed in a PG-DSO-16 package with more than 8 mm creepage and clearance and supports high common-mode transient immunity up to 200 kV/µs. It is specified for ambient operation from -40 °C to 125 °C and carries reinforced isolation ratings including 5700 Vrms for 60 seconds and 6840 Vrms for 1 second.
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Infineon 1ED3830MC12M technical specifications.
| Channels | 1 |
| Isolation voltage | 5700Vrms |
| Isolation test voltage | 6840Vrms |
| Repetitive isolation voltage | 1767Vpeak |
| Peak output current | 3A |
| Output supply absolute maximum | 40V |
| Ambient operating temperature | -40 to 125°C |
| Switching frequency | 250kHz |
| Common-mode transient immunity | 200kV/µs |
| VCC2 UVLO threshold | 12.0 to 12.6V |
| DESAT threshold voltage | 9.18V |
| DESAT leading edge blanking time | 400ns |
| DESAT filter time | 225ns |
| Driver input filter length | 103ns |
| Propagation delay matching | 30 maxns |
| Creepage distance | >8mm |
| Clearance distance | >8mm |
| Package | PG-DSO-16-28/33 |
| Ul 1577 | Recognized, File E311313 |
| Iec 60747-17 | Approved, Certificate No. 40055743 |
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