This single-channel isolated gate-driver IC provides 3 kVrms input-to-output galvanic isolation for fast-switching power applications. It supports a 650 V voltage class and delivers 5.4 A source current and 9.8 A sink current. The device operates from a 3 V to 15 V input supply and features 45 ns turn-on and turn-off propagation delay with +6/-4 ns propagation delay accuracy. Common-mode transient immunity exceeds 300 V/ns, typical output clamping speed is 20 ns, and the output stage includes undervoltage lockout with 8 V and 7 V VBS thresholds and a 2.85 V VCC UVLO threshold. It is offered in the PG-DSO-8-51 package with industrial qualification.
Infineon 1EDB8275F technical specifications.
| Channels | 1 |
| Configuration | High-side |
| Input Vcc | 3 to 15V |
| Isolation Type | Galvanic isolation - Functional |
| Isolation Voltage | 3kVrms |
| Output Current Source | 5.4A |
| Output Current Sink | 9.8A |
| Turn On Propagation Delay | 45ns |
| Turn Off Propagation Delay | 45ns |
| Propagation Delay Accuracy | +6/-4ns |
| Common-Mode Transient Immunity | >300V/ns |
| Output Clamping Speed | 20 typ.ns |
| VBS UVLO On | 8V |
| VBS UVLO Off | 7V |
| VCC UVLO On | 2.85V |
| Voltage Class | 650V |
| Qualification | Industrial |
| Package Pitch | 1.27mm |
| Body Length | 5.0mm |
| Body Width | 4.0mm |
| Body Thickness | 1.45mm |
| RoHS Compliant | Y |
| Halogen Free | Y |
| Lead-free | Y |
No datasheet is available for this part.
