This single-channel isolated high-side gate driver provides 3 kVrms functional galvanic isolation for MOSFET and SiC applications. It supports a 650 V voltage class, 300 V/ns CMTI, and peak output current capability of 5.4 A source and 9.8 A sink. Typical turn-on and turn-off propagation delays are 45 ns, with typical output clamping speed of 20 ns and propagation delay accuracy of +6/-4 ns. The device operates from a 3 V to 15 V input supply, includes VBS UVLO thresholds of 14.9 V on and 14.4 V off, and a VCC UVLO threshold of 2.85 V on. It is industrial-qualified, UL 1577 certified, and offered in a PG-DSO-8-51 surface-mount package.
Infineon 1EDB9275F technical specifications.
| Channels | 1 |
| Configuration | High-side |
| Isolation voltage | 3kVrms |
| Isolation type | Galvanic isolation - Functional |
| CMTI | 300V/ns |
| Output current source | 5.4A |
| Output current sink | 9.8A |
| Input Vcc | 3 to 15V |
| Turn-off propagation delay | 45ns |
| Turn-on propagation delay | 45ns |
| VBS UVLO on | 14.9V |
| VBS UVLO off | 14.4V |
| VCC UVLO on | 2.85V |
| Voltage class | 650V |
| Propagation delay accuracy | +6/-4ns |
| Output clamping speed | 20ns |
| Qualification | Industrial |
| Package | PG-DSO-8-51 |
| RoHS Compliant | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
No datasheet is available for this part.
