This device is a 650 V high-side and low-side gate driver for MOSFET and IGBT power stages with an integrated bootstrap diode. It provides typical peak source and sink drive currents of 0.29 A and 0.7 A, with typical turn-on and turn-off propagation delays of 200 ns and delay matching up to 35 ns. The driver operates from a 10 V to 20 V supply, accepts 3.3 V, 5 V, and 15 V logic levels, and maintains logic operation on the VS pin down to -11 V during transients. It is supplied in a PG-DSO-8-69 package, supports an ambient operating range of -40 °C to 125 °C, and is specified as RoHS compliant.
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Infineon 2ED2106S06F technical specifications.
| High-side offset voltage | 650V |
| Maximum bootstrap voltage | 675V |
| Operating supply voltage | 10 to 20V |
| Peak source current | 0.29A |
| Peak sink current | 0.7A |
| Turn-on propagation delay | 200 typns |
| Turn-off propagation delay | 200 typns |
| Rise time | 100 typns |
| Fall time | 35 typns |
| Delay matching | 35 maxns |
| Allowable VS transient slew rate | 50 maxV/ns |
| Negative VS transient immunity | 100V |
| Logic compatibility | 3.3, 5, 15V |
| Ambient operating temperature | -40 to 125°C |
| VBS UVLO positive threshold | 8.2 typV |
| VCC UVLO positive threshold | 9.1 typV |
| RoHS | Compliant |
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