This half-bridge gate driver is designed for power MOSFET and IGBT applications and has a 650 V voltage class with an integrated ultra-fast bootstrap diode. It operates from a 10 V to 20 V VCC supply, provides 0.29 A source current and 0.7 A sink current, and uses functional level-shift SOI isolation. Propagation delay is 200 ns for both turn-on and turn-off, with independent UVLO on both channels and 540 ns internal dead time. The device is qualified for industrial applications and is offered in a PG-DSO-14-49 package.
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| Channels | 2 |
| Configuration | Half-Bridge |
| Input VCC range | 10 to 20V |
| Isolation type | Functional levelshift SOI (Silicon On Insulator) |
| Output current (sink) | 0.7A |
| Output current (source) | 0.29A |
| Qualification | Industrial |
| Turn-off propagation delay | 200ns |
| Turn-on propagation delay | 200ns |
| VBS UVLO off threshold | 7.2V |
| VBS UVLO on threshold | 8.2V |
| VCC UVLO off threshold | 8.2V |
| VCC UVLO on threshold | 9.1V |
| Voltage class | 650V |
| Negative VS transient immunity | 100V |
| Integrated bootstrap diode | Yes |
| Internal dead time | 540ns |
| Maximum supply voltage | 25V |
| Logic operation on VS pin | up to -11V |
| RoHS Compliant | Yes |
| Lead-free | Yes |
| Halogen Free | Yes |
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