This device is a 650 V half-bridge high-speed gate driver for power MOSFETs and IGBTs. It provides typical 0.29 A source current and 0.7 A sink current, and it integrates an ultra-fast bootstrap diode for floating high-side operation. The device is based on silicon-on-insulator level-shift technology and is specified with 200 ns turn-on and turn-off propagation delay and an internal 540 ns dead time. It supports logic operation on the VS pin down to -11 V, tolerates negative input voltages down to -5 V, and includes independent UVLO protection for both channels. The standard ordering option is supplied in a PG-DSO-8 package with tape-and-reel packing.
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| Isolation Type | Functional levelshift SOI (Silicon On Insulator) |
| Output Current (Sink) | 0.7A |
| Output Current (Source) | 0.29A |
| Turn Off Propagation Delay | 200ns |
| Turn On Propagation Delay | 200ns |
| VBS UVLO (Off) | 7.2V |
| VBS UVLO (On) | 8.2V |
| VCC UVLO (Off) | 8.2V |
| VCC UVLO (On) | 9.1V |
| Voltage Class | 650V |
| Maximum Supply Voltage | 25V |
| Dead Time | 540ns |
| Negative VS Transient Immunity | 100V |
| Logic Operation on VS Pin | -11V |
| Negative Input Voltage Tolerance | -5V |
| Logic Inputs | HIN, /LIN |
| Bootstrap Diode | Integrated ultra-fast |
| Qualification | Industrial |
| RoHS Compliant | Yes |
| Lead-free | Yes |
| Halogen Free | Yes |
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