This half-bridge high-speed gate driver is designed for power MOSFET and IGBT applications with a 650 V voltage class. It provides 0.29 A source current and 0.7 A sink current, supports a 10 V to 20 V VCC input range, and integrates an ultra-fast bootstrap diode. The device uses functional level-shift SOI technology for strong ruggedness and noise immunity against negative transient voltages on the VS pin. It includes independent UVLO for both channels, programmable dead time, and typical propagation delays of 740 ns turn-on and 200 ns turn-off. The device is qualified for industrial use and is offered in an Infineon PG-DSO-14 package.
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| Channels | 2 |
| Configuration | Half-Bridge |
| Input VCC Range | 10 to 20V |
| Isolation Type | Functional levelshift SOI (Silicon On Insulator) |
| Output Current (Sink) | 0.7A |
| Output Current (Source) | 0.29A |
| Qualification | Industrial |
| Turn Off Propagation Delay | 200ns |
| Turn On Propagation Delay | 740ns |
| VBS UVLO Off | 7.2V |
| VBS UVLO On | 8.2V |
| VCC UVLO Off | 8.2V |
| VCC UVLO On | 9.1V |
| Voltage Class | 650V |
| Negative VS Transient Immunity | 100V |
| Maximum Supply Voltage | 25V |
| Logic Operation on VS Pin | -11V |
| Integrated Bootstrap Diode | Yes |
| Programmable Dead Time | Yes |
| RoHS Compliant | Yes |
| Lead-free | Yes |
| Halogen Free | Yes |
