This device is a 650 V gate driver IC with one high-side and one low-side channel for MOSFET and IGBT control. It provides 2.5 A source and 2.5 A sink drive capability, uses a functional level-shift SOI architecture, and integrates a bootstrap diode. The input supply range is 10 V to 20 V, with typical turn-on and turn-off propagation delays of 200 ns. It is qualified for industrial use over a -40 °C to 129 °C operating range and includes VBS and VCC undervoltage lockout thresholds. The part is supplied in an Infineon PG-DSO-14 package with tape-and-reel packing and is marked RoHS compliant, lead-free, and halogen free.
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| Channels | 2 |
| Configuration | High-side and low-side |
| Input VCC Range | 10 to 20V |
| Isolation Type | Functional levelshift SOI (Silicon On Insulator) |
| Output Current (Sink) | 2.5A |
| Output Current (Source) | 2.5A |
| Qualification | Industrial |
| Turn-Off Propagation Delay | 200ns |
| Turn-On Propagation Delay | 200ns |
| VBS UVLO Off | 7.2V |
| VBS UVLO On | 8.2V |
| VCC UVLO Off | 8.2V |
| VCC UVLO On | 9.1V |
| Voltage Class | 650V |
| Operating Temperature | -40 to 129°C |
| RoHS | Compliant |
| Lead-free | Yes |
| Halogen Free | Yes |
