This half-bridge gate driver is designed for high-voltage, high-speed MOSFET, SiC MOSFET, and IGBT drive applications up to 650 V. It provides independent high-side and low-side output channels with typical 2.5 A source and 2.5 A sink peak drive capability, an integrated bootstrap diode, and internal cross-conduction prevention with 400 ns typical dead time. The device operates from a 10 V to 20 V supply, accepts 3.3 V, 5 V, and 15 V logic levels, and includes independent undervoltage lockout on both channels. It is specified for operation from -40 °C to 125 °C ambient and is offered in a PG-DSO-8 package. The device is RoHS compliant, lead-free, and halogen-free.
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Infineon 2ED2182S06F technical specifications.
| Offset Voltage | 650 maxV |
| Peak Source Current | 2.5 typA |
| Peak Sink Current | 2.5 typA |
| Supply Voltage | 10 to 20V |
| Maximum Supply Voltage | 25V |
| Maximum Bootstrap Voltage | 675V |
| Dead Time | 400 typns |
| Turn-On Delay | 200 typns |
| Turn-Off Delay | 200 typns |
| Propagation Delay Matching | 35 maxns |
| Negative VS Transient Immunity | 100V |
| VS Logic Operation | -11V |
| Operating Ambient Temperature | -40 to 125°C |
| Input Logic Compatibility | 3.3 / 5 / 15V |
| VCC UVLO Positive Threshold | 9.1 typV |
| VBS UVLO Positive Threshold | 8.2 typV |
| Package Power Dissipation | 0.625W |
| Thermal Resistance Junction-to-Ambient | 200°C/W |
| Process Technology | Thin-Film Silicon on Insulator (SOI) |
| RoHS | Compliant |
| Lead-free | Yes |
| Halogen Free | Yes |
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