This device is a 650 V half-bridge gate driver for MOSFET, SiC MOSFET, and IGBT applications with integrated high-side and low-side output channels. It uses Infineon's SOI technology and integrates an ultra-fast bootstrap diode, with typical 2.5 A source and 2.5 A sink drive capability and typical 200 ns turn-on and turn-off propagation delay. The driver operates from a 10 V to 20 V supply, supports programmable dead time from 400 ns to 5 us on this 2ED21834S06J variant, and accepts 3.3 V, 5 V, and 15 V logic inputs. The PG-DSO-14 device is qualified for industrial applications, supports ambient operation from -40 °C to 125 °C, and is specified as RoHS compliant, halogen free, and lead free.
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| Configuration | Half-Bridge |
| Voltage Class | 650V |
| Input VCC Range | 10 to 20V |
| Output Current (Sink) | 2.5A |
| Output Current (Source) | 2.5A |
| Turn Off Propagation Delay | 200ns |
| Turn On Propagation Delay | 200ns |
| Delay Matching | 35 maxns |
| Bootstrap Voltage Max | 675V |
| Isolation Type | Functional levelshift SOI (Silicon On Insulator) |
| Dead Time | 400 to 5000ns |
| VBS UVLO Off | 7.2V |
| VBS UVLO On | 8.2V |
| VCC UVLO Off | 8.2V |
| VCC UVLO On | 9.1V |
| Ambient Operating Temperature | -40 to 125°C |
| Junction Temperature | 150 max°C |
| Thermal Resistance Junction-to-Ambient | 120°C/W |
| Allowable VS Offset Supply Transient | 50V/ns |
| Lead-free | Yes |
| Halogen Free | Yes |
| RoHS Compliant | Yes |
