This half-bridge gate driver IC drives MOSFET and IGBT power switches with 2.5 A source and sink capability and a 650 V floating high-side channel. It integrates an ultra-fast bootstrap diode and shoot-through protection, and it uses functional level-shift SOI technology for robust noise immunity. The device operates from a 10 V to 20 V VCC range, provides independent UVLO for both channels, and has 600 ns turn-on and turn-off propagation delay. It is qualified for industrial use and is offered in a PG-DSO-8 surface-mount package.
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| Channels | 2 |
| Configuration | Half-Bridge |
| Input VCC Range | 10 to 20V |
| Isolation Type | Functional levelshift SOI (Silicon On Insulator) |
| Output Current (Sink) | 2.5A |
| Output Current (Source) | 2.5A |
| Qualification | Industrial |
| Turn Off Propagation Delay | 600ns |
| Turn On Propagation Delay | 600ns |
| VBS UVLO On | 8.2V |
| VBS UVLO Off | 7.2V |
| VCC UVLO On | 9.1V |
| VCC UVLO Off | 8.2V |
| Voltage Class | 650V |
| Negative VS Transient Immunity | 100V |
| Maximum Supply Voltage | 25V |
| Logic Operation on VS Pin | -11V |
| Negative Input Voltage Tolerance | -5V |
| Integrated Bootstrap Diode | Yes |
| Integrated Shoot-Through Protection | Yes |
| RoHS Compliant | Yes |
| Lead-free | Yes |
| Halogen Free | Yes |
