This dual-channel gate driver IC is designed to drive low-side and high-side MOSFETs in fast-switching power systems. It supports a 250 V voltage class, provides 5 A output current capability, and uses functional high-side galvanic isolation in a half-bridge high-side and low-side configuration. The device features 36 ns turn-off propagation delay, 38 ns turn-on propagation delay, and up to 4 ns delay matching for improved synchronization. It is offered in a PG-DSO-8 package and is qualified for industrial applications.
Infineon 2EDF5215F technical specifications.
| Channels | 2 |
| Configuration | Half Bridge: High-side and low-side |
| Isolation Type | High-Side Galvanic isolation - Functional |
| Output Current | 5A |
| Package | PG-DSO-8 |
| Qualification | Industrial |
| Turn Off Propagation Delay Range | 30 to 46ns |
| Turn Off Propagation Delay | 36ns |
| Turn On Propagation Delay Range | 33 to 47ns |
| Turn On Propagation Delay | 38ns |
| Voltage Class | 250V |
| Negative HS Transient Immunity | -250V |
| dV/dt Robustness | 100V/ns |
| Source Current | 5A |
| Sink Current | 9A |
| Delay Accuracy High | +9ns |
| Delay Accuracy Low | -5ns |
| Delay Matching Max | 4ns |
| UVLO Output Clamping Threshold | 1.2V |
| Start-up Time Max | <2µs |
| RoHS | Yes |
| Halogen Free | Yes |
| Lead-free | Yes |
No datasheet is available for this part.
