This half-bridge gate driver drives high-side and low-side MOSFETs in a junction-isolated architecture. The floating high-side channel supports up to 120 V bootstrap voltage and uses an integrated bootstrap diode. It operates from an 8 V to 17 V supply, delivers 4 A source and 6 A sink output current, and accepts TTL-compatible inputs with -10 V to 20 V common-mode capability. The device includes UVLO for both channels, typical 33 ns turn-on and turn-off propagation delay, 2 ns typical delay matching, and a -40 °C to 125 °C operating junction temperature range.
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Infineon 2EDL8034F5B technical specifications.
| Channels | 2 |
| Configuration | High-side and low-side |
| Bootstrap voltage max | 120V |
| Supply voltage min | 8V |
| Supply voltage max | 17V |
| Output current source | 4A |
| Output current sink | 6A |
| Input common-mode min | -10V |
| Input common-mode max | 20V |
| Turn-on propagation delay | 33ns |
| Turn-off propagation delay | 33ns |
| VBS UVLO on | 7.3V |
| VBS UVLO off | 6.8V |
| HS negative voltage abs max | -12V |
| Delay matching typical | 2ns |
| Operating junction temperature min | -40°C |
| Operating junction temperature max | 125°C |
| RoHS | Compliant |
| Halogen Free | Yes |
| Lead Free | Yes |
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