This reinforced isolated half-bridge gate driver IC is intended for control across a mandatory safe isolation barrier in switched-mode power supplies. It provides 5 A source and 9 A sink output current, 150 V/ns common-mode transient immunity, and 38 ns turn-on propagation delay with 36 ns turn-off delay. The device supports 1200 V voltage class designs and drives Si MOSFET and GaN HEMT switches in high-power, high-noise environments. It operates from 3 to 17 V input VCC and 8.5 to 20 V output VBS, with 5700 Vrms isolation for 1 minute and 8000 V peak transient isolation. The device is offered in the PG-DSO-14-71 package and is lead-free, RoHS compliant, and halogen free.
Infineon 2EDR8258X technical specifications.
| Voltage Class | 1200V |
| Output Current | 5 sourceA |
| Output Current | 9 sinkA |
| Channels | 2 |
| Qualification | Industrial |
| Isolation Type | Galvanic isolation - Reinforced |
| Isolation Voltage | VIORM = 1767 V; VIOTM = 8000 V; VISO = 5700 Vrms for 1 min |
| Switch Type | Si MOSFET |
| Switch Type | GaN HEMT |
| Turn On Propagation Delay | 38ns |
| Turn Off Propagation Delay | 36ns |
| Input Vcc | 3 to 17V |
| Output Vbs | 8.5 to 20V |
| Rise Time | 6ns |
| VBS UVLO | 8 onV |
| VBS UVLO | 7 offV |
| Configuration | Half-Bridge |
| Configuration | High-side and low-side |
| Common Mode Transient Immunity | 150V/ns |
| RoHS | Compliant |
| Lead-free | Yes |
| Halogen Free | Yes |
No datasheet is available for this part.
