This automotive-qualified N-channel CoolSiC™ Generation 2 power MOSFET is rated for 750 V and 70 A. It provides 25 mΩ typical RDS(on) at 25°C, supports operating temperatures from -55°C to 175°C, and offers 0.55 K/W thermal resistance from junction to case. The device is supplied in a top-side cooled Q-DPAK surface-mount package with driver source pin support and improved .XT interconnect. It is intended for efficient high-voltage switching in automotive and industrial power conversion systems.
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Infineon AIMDQ75R025M2H technical specifications.
| Transistor Type | N-channel SiC MOSFET |
| Drain-Source Voltage | 750V |
| Continuous Drain Current | 70A |
| On-Resistance Typ | 25mΩ |
| On-Resistance Max | 33mΩ |
| Operating Temperature Min | -55°C |
| Operating Temperature Max | 175°C |
| Thermal Resistance Junction-Case | 0.55K/W |
| Mounting | SMT |
| Package | Q-DPAK |
| Technology | CoolSiC™ G2 |
| Qualification | Automotive |
| Body Length | 15.0mm |
| Body Width | 15.4mm |
| Body Thickness | 2.3mm |
| Lead Pitch | 1.14mm |
| RoHS | Compliant |
| Halogen Free | Yes |
| Lead Free | Yes |
No datasheet is available for this part.
