This part is a single silicon Schottky diode in the BAS70 family. It is rated for 70 V reverse voltage, 70 mA forward current, and 250 mW total power dissipation. The BAS70-02V variant uses the SC79 package and is specified for operation from -55 °C to 125 °C, with a maximum junction temperature of 150 °C. Typical diode capacitance is 1.5 pF at 0 V and 1 MHz, and reverse recovery time is 100 ps. The package is Pb-free and RoHS compliant, and this variant is qualified to AEC-Q101.
Infineon BAS 70-02V H6327 technical specifications.
| Diode type | Silicon Schottky diode |
| Configuration | Single |
| Package type | SC79 |
| Lead inductance | 0.6nH |
| Marking code | c |
| Reverse voltage | 70V |
| Forward current | 70mA |
| Peak surge forward current | 100mA |
| Total power dissipation | 250mW |
| Junction temperature | 150°C |
| Operating temperature range | -55 to 125°C |
| Storage temperature range | -55 to 150°C |
| Thermal resistance junction-to-soldering-point | 170K/W |
| Reverse current | 0.1µA |
| Forward voltage at 1 mA | 410 maxmV |
| Forward voltage at 10 mA | 750 maxmV |
| Forward voltage at 15 mA | 1000 maxmV |
| Diode capacitance | 2 maxpF |
| Diode capacitance typical | 1.5pF |
| Forward resistance typical | 34Ω |
| Reverse recovery time | 100ps |
| RoHS | Compliant |
| Aec-q101 | Qualified |
No datasheet is available for this part.
