The BC857B-E6327 is a PNP transistor with a collector-emitter breakdown voltage of 45V and a maximum collector current of 100mA. It has a frequency of 250MHz and a gain bandwidth product of 250MHz. The transistor is packaged in a SOT-23 package and is suitable for surface mount applications. The operating temperature range is from -65°C to 150°C, and the maximum power dissipation is 330mW.
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Infineon BC857B-E6327 technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 650mV |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 250MHz |
| Gain Bandwidth Product | 250MHz |
| hFE Min | 250 |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Frequency | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 330mW |
| Radiation Hardening | No |
| Series | BC857 |
| Transition Frequency | 250MHz |
| RoHS | Compliant |
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