The BCR583-E6327 is a surface mount transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. It has a maximum power dissipation of 330mW and a transition frequency of 150MHz. The device is packaged in a TO-236-3 package and is available in quantities of 3000. The BCR583-E6327 is compliant with RoHS regulations. It is suitable for use in a variety of applications including general-purpose switching and amplification.
PackageTO-236-3
MountingSurface Mount
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Technical Specifications
Infineon BCR583-E6327 technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 330mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Cut Tape |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BCR583-E6327 Datasheet
Download the complete datasheet for Infineon BCR583-E6327 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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