The BDP950H6327XT is a PNP transistor from Infineon with a maximum operating temperature of 150°C and a minimum operating temperature of -65°C. It has a collector base voltage of 60V, collector emitter voltage of 60V, and an emitter base voltage of 5V. The transistor is packaged in a surface mount SOT-223 package and is available on tape and reel. It can handle a power dissipation of 5W and operates at a frequency of 100MHz.
Infineon BDP950H6327XT technical specifications.
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Voltage (VCEO) | 60V |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 5W |
| RoHS | Compliant |
Download the complete datasheet for Infineon BDP950H6327XT to view detailed technical specifications.
No datasheet is available for this part.