The BFP540FESDH6327 is a surface mount NPN transistor from Infineon with a collector-emitter voltage of 4.5V and a maximum collector current of 80mA. It operates over a temperature range of -65°C to 150°C and has a maximum power dissipation of 250mW. The transistor features a gain of 20dB and a transition frequency of 30GHz. It is packaged in a SMD/SMT package and is lead-free compliant.
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| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | 10V |
| Collector Emitter Breakdown Voltage | 5V |
| Collector-emitter Voltage-Max | 4.5V |
| Continuous Collector Current | 80mA |
| Emitter Base Voltage (VEBO) | 1V |
| Frequency | 30GHz |
| Gain | 20dB |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Max Collector Current | 80mA |
| Max Frequency | 30GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 250mW |
| Reach SVHC Compliant | Yes |
| Series | BFP540 |
| Transition Frequency | 30GHz |
| RoHS | Compliant |
Download the complete datasheet for Infineon BFP540FESDH6327 to view detailed technical specifications.
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