The BFP640ESDH6327 is an NPN transistor from Infineon, packaged in a SOT-343 surface mount package. It has a collector-emitter breakdown voltage of 4.7V and a maximum collector current of 50mA. The device operates at frequencies up to 45GHz and can withstand temperatures up to 150°C. It is available in tape and reel packaging.
Frequency45GHz
PackageSOT-343
MountingSurface Mount
PolarityNPN
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Technical Specifications
Infineon BFP640ESDH6327 technical specifications.
General
| Package/Case | SOT-343 |
| Collector Base Voltage (VCBO) | 4.8V |
| Collector Emitter Breakdown Voltage | 4.7V |
| Collector-emitter Voltage-Max | 4.1V |
| Continuous Collector Current | 50mA |
| Emitter Base Voltage (VEBO) | 500mV |
| Gain | 30dB |
| Height | 0.9mm |
| hFE Min | 110 |
| Length | 2mm |
| Max Breakdown Voltage | 4.7V |
| Max Collector Current | 50mA |
| Max Frequency | 45GHz |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Operating Frequency | 45 GHz |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Transition Frequency | 46GHz |
| Width | 1.25mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BFP640ESDH6327 Datasheet
Download the complete datasheet for Infineon BFP640ESDH6327 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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