The BG3123RH6327 is an N-channel FET from Infineon with a maximum operating temperature of 150°C and a maximum power dissipation of 200mW. It has a voltage rating of 8V and a current rating of 20mA. The device is packaged in a SOT-363-6 package and is available in quantities of 3000 per reel. The FET has a frequency of 800MHz and a gain of 25dB. It can handle a drain to source breakdown voltage of 12V and a gate to source voltage of 6V.
Frequency800MHz
PackageSOT-363-6
Voltage Rating8V
Current Rating20mA
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Technical Specifications
Infineon BG3123RH6327 technical specifications.
General
| Package/Case | SOT-363-6 |
| Continuous Drain Current (ID) | 25mA |
| Current Rating | 20mA |
| Drain to Source Breakdown Voltage | 12V |
| Drain to Source Voltage (Vdss) | 12V |
| Frequency | 800MHz |
| Gain | 25dB |
| Gate to Source Voltage (Vgs) | 6V |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 200mW |
| Noise Figure | 1.8dB |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 200mW |
| Test Voltage | 5V |
| Voltage Rating | 8V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BG3123RH6327 Datasheet
Download the complete datasheet for Infineon BG3123RH6327 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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