
This N-channel power MOSFET is rated for 25 V drain-source voltage and up to 217 A continuous drain current at 25°C. It offers a maximum on-resistance of 0.95 mΩ at 10 V gate drive and 1.35 mΩ at 4.5 V, with typical total gate charge values of 36 nC at 10 V and 17 nC at 4.5 V. The device is housed in a SuperSO8 5x6 surface-mount package with 8 pins and supports operation from -55°C to 150°C. It is part of the OptiMOS™ 5 family and includes logic-level operation with a monolithically integrated Schottky-like diode. The listed ordering option is RoHS compliant and halogen free.
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| Drain-source voltage | 25V |
| Continuous drain current at 25°C | 217A |
| Pulsed drain current | 868A |
| Power dissipation | 74W |
| Input capacitance | 2400pF |
| Output capacitance | 1400pF |
| Gate charge at 10 V | 36nC |
| Gate charge at 4.5 V | 17nC |
| On-resistance at 10 V max | 0.95mΩ |
| On-resistance at 4.5 V max | 1.35mΩ |
| Threshold voltage | 1.6V |
| Junction-to-ambient thermal resistance max | 50K/W |
| Junction-to-case thermal resistance max | 1.7K/W |
| Operating temperature range | -55 to 150°C |
| Mounting | SMD |
| Pin count | 8Pins |
| Polarity | N |
| Special features | Logic Level, Monolithically Integrated Schottky-like Diode |
| RoHS Compliant | Yes |
| Halogen Free | Yes |
| Lead-free | No |
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