This N-channel power MOSFET uses Infineon's OptiMOS™ 6 technology and is rated for 40 V drain-source voltage. It provides up to 285 A continuous drain current and a maximum on-resistance of 1 mΩ at 10 V gate drive, with 1.4 mΩ maximum at 4.5 V. The device is offered in an SMT SuperSO8 5x6 package with 8 pins and fused leads, and it operates from -55 °C to 175 °C. Maximum power dissipation is 150 W, with typical total gate charge of 32 nC at 4.5 V and 67 nC at 10 V.
Checking distributor stock and pricing after the page loads.
Infineon BSC010N04LS6 technical specifications.
| Drain-source voltage (VDS) max | 40V |
| Continuous drain current (ID) max at 25°C | 285A |
| Pulsed drain current (IDpuls) max | 1140A |
| Mounting | SMT |
| Operating temperature range | -55 to 175°C |
| Package | SuperSO8 5x6 |
| Pin count | 8Pins |
| Polarity | N |
| Power dissipation (Ptot) max | 150W |
| Total gate charge (Qg) typ at 4.5 V | 32nC |
| Total gate charge (Qg) typ at 10 V | 67nC |
| RDS(on) max at 10 V | 1mΩ |
| RDS(on) max at 4.5 V | 1.4mΩ |
| Special features | Logic Level, Fused leads |
| Gate threshold voltage range | 1.3 to 2.3V |
| Gate threshold voltage typ | 1.64V |
| RoHS Compliant | Yes |
| Halogen Free | Yes |
| Lead-free | No |
No datasheet is available for this part.
