This 60 V N-channel power MOSFET is optimized for synchronous rectification and uses Infineon's dual-side cooled SuperSO8 DSC package for low thermal resistance. It provides a maximum drain-source on-state resistance of 1.6 mOhm at 10 V gate drive and supports up to 234 A continuous drain current at 25 °C. The device is rated for junction temperatures up to 175 °C, is 100% avalanche tested, and offers low junction-to-case thermal resistance from both top and bottom surfaces. It is Pb-free, RoHS compliant, and halogen-free according to IEC61249-2-21.
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Infineon BSC016N06NSSC technical specifications.
| Drain-Source Voltage | 60V |
| On-State Resistance Max @ VGS=10V | 1.6mOhm |
| Continuous Drain Current @ 25°C | 234A |
| Continuous Drain Current @ 100°C | 165A |
| Pulsed Drain Current | 936A |
| Avalanche Energy Single Pulse | 380mJ |
| Gate-Source Voltage | -20 to 20V |
| Power Dissipation @ 25°C | 167W |
| Operating and Storage Temperature Range | -55 to 175°C |
| Thermal Resistance Junction-to-Case Bottom Typ | 0.5K/W |
| Thermal Resistance Junction-to-Case Top Typ | 0.4K/W |
| Gate Threshold Voltage Typ | 2.8V |
| Input Capacitance Typ | 5200pF |
| Output Capacitance Typ | 1200pF |
| Reverse Transfer Capacitance Typ | 48pF |
| Total Gate Charge Typ | 71nC |
| Output Charge Typ | 81nC |
| Diode Forward Current Continuous | 119A |
| Reverse Recovery Time Typ | 61ns |
| Reverse Recovery Charge Typ | 78nC |
| RoHS | Compliant |
| Halogen Free | According to IEC61249-2-21 |
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