This N-channel 100 V power MOSFET is built on Infineon's OptiMOS™ 5 technology and is housed in a SuperSO8 5x6 dual-side-cooled package. It is rated for 171 A continuous drain current at 25 °C, 684 A pulsed drain current, and 188 W total power dissipation. Maximum drain-source on-resistance is 3 mΩ at 10 V gate drive, typical total gate charge is 70 nC at 10 V, and the gate-threshold range is 2.2 V to 3.8 V. The device operates from -55 °C to 175 °C and uses a low top-side thermal resistance package to improve heat dissipation.
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| Drain-source voltage | 100V |
| Continuous drain current at 25°C | 171A |
| Pulsed drain current | 684A |
| Operating temperature range | -55 to 175°C |
| Package | SuperSO8 5x6 DSC |
| Polarity | N-channel |
| Power dissipation | 188W |
| Total gate charge at 10 V | 70nC |
| Drain-source on-resistance max at 10 V | 3mΩ |
| Special features | Dual-Side Cooling |
| Gate threshold voltage range | 2.2 to 3.8V |
| Gate threshold voltage | 3V |
| RoHS | Compliant |
| Halogen Free | Yes |
| Lead Free | No |
