This N-channel power MOSFET is rated for 80 V drain-source voltage and 131 A continuous drain current at 25°C. It is housed in a SuperSO8 5x6 surface-mount package with 8 pins and is specified for operation from -55°C to 175°C. Maximum RDS(on) is 3.7 mΩ at 10 V gate drive, and typical total gate charge is 46 nC at 10 V. The device is positioned for synchronous rectification in telecom and server power supplies and can also be used in industrial power applications. The ordering information lists the device as RoHS compliant and halogen free.
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| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage | 80V |
| Continuous Drain Current | 131A |
| Pulsed Drain Current | 524A |
| On-Resistance RDS(on) max @ 10V | 3.7mΩ |
| Total Gate Charge Qg typ @ 10V | 46nC |
| Input Capacitance Ciss | 3200pF |
| Output Capacitance Coss | 530pF |
| Power Dissipation Ptot max | 114W |
| Operating Temperature Min | -55°C |
| Operating Temperature Max | 175°C |
| Thermal Resistance Junction-to-Ambient max | 50K/W |
| Thermal Resistance Junction-to-Case max | 1.1K/W |
| Gate Threshold Voltage Min | 2.2V |
| Gate Threshold Voltage Max | 3.8V |
| Mounting | SMD |
| Pin Count | 8Pins |
| Battery Voltage | 36-48V |
| RoHS Compliant | Yes |
| Halogen Free | Yes |
| Lead-free | No |
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