
The BSC079N10NSG is a 100V, 100A OptiMOS MOSFET from Infineon, featuring a maximum Rds On resistance of 7.9mR and a maximum power dissipation of 156W. It operates over a temperature range of -55°C to 150°C and is available in a tape and reel packaging format with 5000 units per package. The device is RoHS compliant and halogen free, making it suitable for a range of applications. The MOSFET has a nominal Vgs of 3V and a maximum Vdss of 100V, with a continuous drain current of 100A.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon BSC079N10NSG datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon BSC079N10NSG technical specifications.
| Package/Case | 100 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 5.9nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 156W |
| Nominal Vgs | 3V |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Rds On Max | 7.9mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 24ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSC079N10NSG to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.