This device is a logic-level N-channel power MOSFET built on Infineon's OptiMOS™ 5 technology. It is rated for 100 V drain-source voltage, 40 A continuous drain current, and 160 A pulsed drain current. The MOSFET is offered in a SuperSO8 5x6 surface-mount package with a maximum RDS(on) of 9.6 mΩ at 10 V and 12.5 mΩ at 4.5 V. It has a typical gate charge of 12 nC, a maximum power dissipation of 83 W, and an operating junction temperature range of -55 °C to 175 °C.
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| Drain-Source Voltage | 100V |
| Continuous Drain Current | 40A |
| Pulsed Drain Current | 160A |
| On-Resistance @10V Max | 9.6mΩ |
| On-Resistance @4.5V Max | 12.5mΩ |
| Gate Charge @4.5V Typ | 12nC |
| Power Dissipation Max | 83W |
| Operating Temperature Min | -55°C |
| Operating Temperature Max | 175°C |
| Gate Threshold Voltage Typ | 1.7V |
| Gate Threshold Voltage Range Min | 1.1V |
| Gate Threshold Voltage Range Max | 2.3V |
| Mounting | SMT |
| Pin Count | 8Pins |
| Polarity | N-channel |
| Special Features | Logic Level |
| Moisture Sensitivity Level | 1 |
| RoHS Compliant | Yes |
| Halogen Free | Yes |
| Lead-free | No |
