This N-channel logic-level power MOSFET is rated for 150 V drain-source voltage and is built on Infineon's OptiMOS 5 technology. It uses the PG-TDSON-8 SuperSO8 package and is specified for up to 76 A continuous drain current at 25 °C case temperature. The device features a maximum drain-source on-resistance of 10.5 mΩ at 10 V gate drive and 14 mΩ at 4.5 V gate drive. Total gate charge is specified at 34 nC typical at 0 V to 10 V, and output charge is 81 nC typical. It is avalanche tested, uses Pb-free lead plating, is RoHS compliant, and is halogen-free according to IEC 61249-2-21.
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Infineon BSC105N15LS5 technical specifications.
| Channel Type | N-channel |
| Logic Level | Yes |
| Drain-Source Voltage | 150V |
| Continuous Drain Current | 76A |
| Continuous Drain Current at 100°C Case | 48A |
| Continuous Drain Current at 4.5V Gate and 100°C Case | 41A |
| Pulsed Drain Current | 304A |
| Avalanche Energy Single Pulse | 62mJ |
| Gate-Source Voltage | -20 to 20V |
| Power Dissipation at 25°C Case | 125W |
| Operating Junction Temperature | -55 to 150°C |
| Thermal Resistance Junction-Case Bottom | 1.0°C/W |
| Thermal Resistance Junction-Case Top | 20°C/W |
| Thermal Resistance Junction-Ambient | 50°C/W |
| Gate Threshold Voltage | 1.3 to 2.3V |
| On-Resistance at 10V Gate | 10.5 maxmΩ |
| On-Resistance at 4.5V Gate | 14 maxmΩ |
| Input Capacitance | 2300 typpF |
| Output Capacitance | 580 typpF |
| Reverse Transfer Capacitance | 17 typpF |
| Turn-On Delay Time | 6.4 typns |
| Rise Time | 2.3 typns |
| Turn-Off Delay Time | 17.8 typns |
| Fall Time | 3.4 typns |
| Gate Charge Total at 10V | 34 typnC |
| Output Charge | 81 typnC |
| Diode Forward Voltage | 0.83 typV |
| Reverse Recovery Time | 24.3 typns |
| Reverse Recovery Charge | 15.7 typnC |
| RoHS | Compliant |
| Halogen Free | Yes |
| Lead Finish | Pb-free lead plating |
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