N-Channel Power MOSFET, 100V Vdss, 63A Continuous Drain Current (ID), and 10.9mR Rds On Max. This silicon Metal-oxide Semiconductor FET features a 2.7V threshold voltage, 2.5nF input capacitance, and fast switching times with a 12ns turn-on delay and 5ns fall time. Designed for surface mounting in a TDSON-8 package, it operates from -55°C to 150°C with a maximum power dissipation of 78W. RoHS compliant and halogen-free.
MountingSurface Mount
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Technical Specifications
Infineon BSC109N10NS3GATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 63A |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.5nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 78W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 10.9mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 2.7V |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 12ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC109N10NS3GATMA1 Datasheet
Download the complete datasheet for Infineon BSC109N10NS3GATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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