N-Channel Power MOSFET featuring 100V drain-source voltage and 11A continuous drain current. Offers a low 11.8mΩ Rds(on) for efficient power switching. Designed for surface mount applications with a TDSON-8 plastic package. Key switching characteristics include an 8ns fall time, 21ns turn-on delay, and 32ns turn-off delay. Maximum power dissipation is rated at 114W, with operating temperatures from -55°C to 150°C. This RoHS compliant component is halogen-free.
MountingSurface Mount
Power114W
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Technical Specifications
Infineon BSC118N10NSGATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 3.7nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 114W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 114W |
| Rds On Max | 11.8mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 21ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC118N10NSGATMA1 Datasheet
Download the complete datasheet for Infineon BSC118N10NSGATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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