The BSD840NH6327XT is a dual N-channel MOSFET from Infineon with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current of 880mA and a power dissipation of 500mW. The device features a drain to source breakdown voltage of 20V and a drain to source resistance of 400mR. The BSD840NH6327XT has a fall time of 0.9ns and a turn-off delay time of 7.8ns.
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Infineon BSD840NH6327XT technical specifications.
| Continuous Drain Current (ID) | 880mA |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 400mR |
| Element Configuration | Dual |
| Fall Time | 0.9ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Power Dissipation | 500mW |
| Turn-Off Delay Time | 7.8ns |
| RoHS | Compliant |
No datasheet is available for this part.
