This device is a P-channel enhancement-mode power MOSFET rated for -60 V operation in a SO-8 surface-mount package. It provides a maximum RDS(on) of 130 mΩ at 10 V gate drive, a continuous drain current of -3.44 A, and a pulsed drain current of -13.8 A. The device has typical gate charge of 20 nC, input capacitance of 700 pF, and output capacitance of 235 pF. It is specified for operation from -55 °C to 150 °C, supports fast switching, and is avalanche and dv/dt rated. The part is qualified to AEC-Q101 and is lead-free, halogen-free, and RoHS compliant.
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| Drain-Source Voltage | -60V |
| RDS(on) Max | 130mOhm |
| Continuous Drain Current | -3.44A |
| Pulsed Drain Current | -13.8A |
| Input Capacitance | 700pF |
| Output Capacitance | 235pF |
| Gate Charge Typ | 20nC |
| Power Dissipation | 2.5W |
| Thermal Resistance | 100K/W |
| Gate Threshold Voltage | -2.1 to -4V |
| Operating Temperature | -55 to 150°C |
| Mode | Enhancement |
| Mounting | SMD |
| Package | SO-8 |
| Polarity | P-channel |
| Qualification | AEC-Q101 |
| Avalanche Rated | Yes |
| dv/dt Rated | Yes |
| Moisture Sensitivity Level | 3 |
| RoHS | Yes |
| Halogen Free | Yes |
| Lead-free | Yes |
