The BSO615CG is a dual N and P-channel FET from Infineon, packaged in a SOIC case for surface mount applications. It can handle a continuous drain current of up to 2A and a drain to source voltage of 60V. The device has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It is compliant with RoHS and Reach SVHC regulations.
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Infineon BSO615CG technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 2A |
| Current Rating | 3.1A |
| Drain to Source Voltage (Vdss) | 60V |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.45mm |
| Input Capacitance | 380pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Rds On Max | 110mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 125ns |
| Width | 4mm |
| RoHS | Compliant |
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