This device is an N-channel enhancement-mode small-signal power MOSFET in a SOT-223 surface-mount package. It supports up to 100 V drain-source voltage, 1.8 A continuous drain current at 25°C, and 7.3 A pulsed drain current. Maximum drain-source on-resistance is 240 mΩ at 10 V gate drive, and typical total gate charge is 6.2 nC at 10 V. The part is rated for 1.8 W power dissipation, uses a 4-pin package, and operates up to 150°C junction temperature. Typical capacitances are 199 pF input and 36 pF output, and the exact orderable part is listed as RoHS compliant and halogen free.
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Infineon BSP373N H6327 technical specifications.
| Transistor Type | N-channel enhancement-mode MOSFET |
| Drain-Source Voltage | 100V |
| Continuous Drain Current @25°C | 1.8A |
| Pulsed Drain Current | 7.3A |
| Power Dissipation | 1.8W |
| Drain-Source On-Resistance @10V | 240 maxmOhm |
| Gate Threshold Voltage | 2.1 to 4.0V |
| Total Gate Charge @10V | 6.2 typnC |
| Input Capacitance | 199pF |
| Output Capacitance | 36pF |
| Thermal Resistance Junction-Case | 25K/W |
| Thermal Resistance Junction-Ambient | 110K/W |
| Pin Count | 4Pins |
| Mounting | SMD |
| RoHS | Compliant |
| Halogen Free | yes |
No datasheet is available for this part.
