This device is a depletion-mode N-channel MOSFET in a PG-SOT23 package. It is rated for 600 V drain-source breakdown voltage, 700 Ω maximum drain-source on-state resistance, and 7 mA minimum on-state drain current. The MOSFET supports up to ±20 V gate-source voltage, 0.50 W power dissipation, and operation from -55 °C to 150 °C. It is dv/dt rated, uses Pb-free lead plating, is RoHS compliant, and is halogen-free according to IEC 61249-2-21. The part is fully qualified according to JEDEC for industrial applications.
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Infineon BSS126I technical specifications.
| Channel Type | N-Channel |
| Mode | Depletion |
| Drain-Source Breakdown Voltage | 600V |
| Drain-Source On-State Resistance Max | 700Ω |
| On-State Drain Current Min | 0.007A |
| Continuous Drain Current at 25°C | 0.021A |
| Continuous Drain Current at 70°C | 0.017A |
| Pulsed Drain Current | 0.085A |
| Gate-Source Voltage | ±20V |
| Power Dissipation | 0.50W |
| Operating Temperature Min | -55°C |
| Operating Temperature Max | 150°C |
| Thermal Resistance Junction-to-Ambient | 250K/W |
| Input Capacitance | 21pF |
| Output Capacitance | 2.4pF |
| Reverse Transfer Capacitance | 1.0pF |
| Turn-On Delay Time | 6.1ns |
| Rise Time | 9.7ns |
| Turn-Off Delay Time | 14ns |
| Fall Time | 115ns |
| Total Gate Charge | 1.4nC |
| Diode Forward Voltage Typ | 0.81V |
| Reverse Recovery Time | 160ns |
| Reverse Recovery Charge | 13.2nC |
| RoHS | Compliant |
| Halogen Free | IEC61249-2-21 |
| Lead Finish | Pb-free lead plating |
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