The BSS314PEH6327XT is a P-channel MOSFET from Infineon with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a drain to source breakdown voltage of 30V and a continuous drain current of -1.5A. The device is packaged in tape and reel format and has a power dissipation of 500mW.
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Infineon BSS314PEH6327XT technical specifications.
| Continuous Drain Current (ID) | -1.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 140mR |
| Fall Time | 2.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 500mW |
| Turn-Off Delay Time | 12.4ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSS314PEH6327XT to view detailed technical specifications.
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