The BSS670S2LH6327 is a surface mount power MOSFET from Infineon, featuring a maximum drain to source voltage of 55V and continuous drain current of 540mA. It has a maximum power dissipation of 360mW and an on-resistance of 650mR. The device is packaged in a TO-236-3 case and is available on tape and reel. It is compliant with RoHS regulations and is part of the OptiMOS series.
Sign in to ask questions about the Infineon BSS670S2LH6327 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon BSS670S2LH6327 technical specifications.
| Package/Case | TO-236-3 |
| Continuous Drain Current (ID) | 540mA |
| Drain to Source Voltage (Vdss) | 55V |
| Input Capacitance | 75pF |
| Max Power Dissipation | 360mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 650mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSS670S2LH6327 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
