
The BSS670S2LH6327 is a surface mount power MOSFET from Infineon, featuring a maximum drain to source voltage of 55V and continuous drain current of 540mA. It has a maximum power dissipation of 360mW and an on-resistance of 650mR. The device is packaged in a TO-236-3 case and is available on tape and reel. It is compliant with RoHS regulations and is part of the OptiMOS series.
Infineon BSS670S2LH6327 technical specifications.
| Package/Case | TO-236-3 |
| Continuous Drain Current (ID) | 540mA |
| Drain to Source Voltage (Vdss) | 55V |
| Input Capacitance | 75pF |
| Max Power Dissipation | 360mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 650mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSS670S2LH6327 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.