This device is an N-channel enhancement-mode small-signal MOSFET in a PG-SOT23 package. It supports up to 20 V drain-source voltage and 2.3 A continuous drain current at 25 °C, with ultra logic-level drive rated at 1.8 V. The MOSFET is avalanche rated, ESD protected, and qualified according to AEC Q101. It operates from -55 °C to 150 °C and is specified as lead-free, RoHS compliant, and halogen-free.
Infineon BSS806NE H6327 technical specifications.
| Channel type | N-channel |
| Transistor mode | Enhancement mode |
| Drain-source voltage | 20V |
| Continuous drain current | 2.3A |
| Continuous drain current at 70°C | 1.9A |
| Pulsed drain current | 9.3A |
| Gate-source voltage | ±8V |
| Power dissipation | 0.5W |
| Operating junction temperature | -55 to 150°C |
| Drain-source on-resistance max at VGS=1.8V | 82mΩ |
| Drain-source on-resistance max at VGS=2.5V | 57mΩ |
| Gate threshold voltage | 0.3 to 0.75V |
| Input capacitance typ | 370pF |
| Output capacitance typ | 118pF |
| Reverse transfer capacitance typ | 20pF |
| Total gate charge typ | 1.7nC |
| Thermal resistance junction-to-ambient | 250K/W |
| RoHS | Compliant |
| Halogen Free | Yes |
| Lead Free | Yes |
| Aec-q101 | Qualified |
No datasheet is available for this part.
