This N-channel power MOSFET is rated for 40 V drain-source voltage and is intended for synchronous rectification, wireless chargers, quick chargers, and ORing circuits. It provides a maximum RDS(on) of 1.8 mΩ at 10 V gate drive and 2.7 mΩ at 4.5 V, with typical total gate charge of 31 nC at 10 V and 15 nC at 4.5 V. The device supports up to 158 A continuous drain current and 633 A pulsed drain current, with a maximum power dissipation of 83 W. It is offered in an 8-pin PG-TSDSON-8 / PQFN 3x3 package and operates from -55 °C to 175 °C. The part is RoHS compliant, halogen free, and specified with MSL 1 handling.
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| Drain-Source Voltage | 40V |
| Continuous Drain Current | 158A |
| Pulsed Drain Current | 633A |
| Operating Temperature Range | -55 to 175°C |
| Power Dissipation | 83W |
| Total Gate Charge at 10 V | 31nC |
| Total Gate Charge at 4.5 V | 15nC |
| On-Resistance at VGS 10 V | 1.8mΩ |
| On-Resistance at VGS 4.5 V | 2.7mΩ |
| Gate Threshold Voltage Range | 1.3 to 2.3V |
| Typical Gate Threshold Voltage | 1.7V |
| Package | PQFN 3.3 x 3.3 Fused Lead |
| Pin Count | 8Pins |
| Polarity | N |
| Special Features | Logic Level |
| RoHS Compliant | Yes |
| Halogen Free | Yes |
| Lead-free | No |
| Moisture Sensitivity Level | 1 |
