This device is a 650 V radiation-hard N-channel power MOSFET supplied in the hermetically sealed SMD05 package. The flight-use BUY65CS08J-01(ES) variant is space qualified to ESCC Detail Specification 5205/033 and is characterized for single-event effects and total ionisation dose. It supports up to 8 A continuous drain current at 25 °C case temperature, 24 A pulsed drain current, and 75 W total power dissipation. The MOSFET operates from -55 °C to 150 °C, offers 370 mΩ typical drain-source on-resistance at 10 V gate drive, and is approved to 100 kRad total ionisation dose.
Infineon BUY65CS08J-01(ES) technical specifications.
| Transistor type | N-channel power MOSFET |
| Drain-source voltage | 650V |
| Gate-source voltage | -20 to 20V |
| Drain-gate voltage | 650V |
| Continuous drain current at case temperature 25 °C | 8A |
| Continuous drain current at case temperature 100 °C | 5A |
| Continuous source current | 8A |
| Pulsed drain current | 24A |
| Total power dissipation | 75W |
| Operating and storage temperature range | -55 to 150°C |
| Avalanche energy | 100mJ |
| Thermal resistance junction-to-case | 1.66K/W |
| Soldering temperature | 250°C |
| Drain-source on-state resistance | 370 typ, 450 max at 25 °C; 900 max at 125 °CmΩ |
| Gate threshold voltage at 25 °C | 2 to 4V |
| Total gate charge | 23 typ, 30 maxnC |
| Input capacitance | 1.5 typnF |
| Output capacitance | 50 typpF |
| Reverse transfer capacitance | 4.5 typpF |
| Reverse recovery time | 600 typ, 700 maxns |
| Total ionisation dose hardness | 100 approvedkRad |
| Single event effect hardness | LET 90 MeV/(mg/cm²) at Pb, LET 62 MeV/(mg/cm²) at Xe |
No datasheet is available for this part.
