This normally-off e-mode GaN power transistor is rated for 100 V operation and is housed in a 3 mm x 3 mm PQFN surface-mount package. It features 5.0 mΩ typical drain-source on-state resistance, 38 A continuous drain current at 25 °C case temperature, and 6.1 nC typical total gate charge. The device supports a 5 V nominal gate drive, provides 0 nC reverse recovery charge, and is qualified for industrial applications. Its top side exposes the silicon substrate for improved thermal performance, and Infineon lists the part as active and preferred with planned availability until at least 2035.
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| Technology | GaN HEMT |
| Drain-source voltage | 100V |
| Pulsed drain-source voltage | 120V |
| Continuous drain current | 38A |
| Continuous drain current (ambient) | 13A |
| Pulsed drain current | 360A |
| Drain-source on-state resistance | 5.0mΩ |
| Gate-source voltage | -4.0 to 5.5V |
| Gate threshold voltage | 2.1 typV |
| Total gate charge | 6.1 typnC |
| Output charge | 25 typnC |
| Reverse recovery charge | 0nC |
| Thermal resistance junction-ambient | 48°C/W |
| Junction temperature | -40 to 150°C |
| Storage temperature | -55 to 150°C |
| Qualification | Industrial |
| RoHS | Compliant |
| Lead Free | Yes |
| Halogen Free | Yes |
