This normally-off e-mode GaN power transistor is rated for 100 V drain-to-source voltage and 23 A continuous drain current at 25°C, with 97 A pulsed current capability. It is housed in a compact bottom-side cooled PQFN 3x3 package that supports high power density designs. The device features 9.4 mΩ typical on-state resistance and 3.4 nC gate charge, along with reverse conduction capability and no reverse recovery charge. It is qualified for industrial use and is specified as RoHS compliant, halogen free, and lead-free.
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| Family | CoolGaN™ Transistor 100 V G3 |
| Drain-to-source voltage max | 100V |
| Continuous drain current max at 25°C | 23A |
| Pulsed drain current max at 25°C | 97A |
| On-resistance typ | 9.4mΩ |
| Gate charge | 3.4nC |
| Package | PQFN |
| Infineon package | PG-VSON-4 |
| Qualification | Industrial |
| Planned availability until at least | 2035 |
| Packing size | 5000 |
| Packing type | TAPE & REEL |
| Moisture sensitivity level | 1 |
| Moisture packing | NON DRY |
| Reverse recovery charge | None |
| Reverse conduction capability | Yes |
| Bottom-side cooled package | Yes |
| RoHS | Compliant |
| Halogen Free | Yes |
| Lead Free | Yes |
