This e-mode GaN power transistor is rated for 700 V and has a typical RDS(on) of 500 mΩ. It supports 3.4 A maximum continuous drain current and 6.7 A pulsed drain current at 25 °C, with 0.53 nC gate charge for fast switching. The device is housed in a DPAK package and is JEDEC qualified to JESD47 and JESD22. It is RoHS compliant and marked active and preferred, with planned availability until at least 2035.
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| Transistor technology | GaN HEMT |
| Mode | Enhancement mode (e-mode) |
| Drain-source voltage max | 700V |
| On-resistance typ | 500mΩ |
| Continuous drain current max @25°C | 3.4A |
| Pulsed drain current max @25°C | 6.7A |
| Total gate charge | 0.53nC |
| Package | DPAK |
| Qualification | JEDEC JESD47, JESD22 |
| Reverse-recovery charge | None |
| Reverse conduction capable | Yes |
| RoHS | Compliant |
