This 600 V GaN half-bridge integrates two 140 mΩ enhancement-mode switches with high-side and low-side gate drivers in a 6 x 8 mm TFLGA-27 package. The device includes an integrated bootstrap diode, PWM-compatible logic inputs, and a single 12 V gate-driver supply with undervoltage lockout protection. It supports up to 6 A continuous drain current at 25°C and 23 A pulsed current, with 1.8 nC typical gate charge per switch and 98 ns typical input-to-output propagation delay. The part is qualified for industrial applications and is intended for low-power motor drives, low-power SMPS, and compact two-level inverter topologies.
Infineon IGI60L1414B1M technical specifications.
| Drain-source voltage | 600V |
| Drain current at 25°C | 6A |
| Pulsed drain current at 25°C | 23A |
| RDS(on) typical | 140mΩ |
| Gate charge per switch | 1.8nC |
| Driver supply voltage typical | 12V |
| Driver supply voltage range | 10 to 20V |
| Input-to-output propagation delay typical | 98ns |
| Turn-on propagation delay typical | 90ns |
| Turn-off propagation delay typical | 90ns |
| Turn-on rise time typical | 70ns |
| Turn-off fall time typical | 35ns |
| Delay matching time max | 10ns |
| UVLO turn-on threshold typical | 8.9V |
| UVLO hysteresis typical | 0.9V |
| Operating junction temperature range | -40 to 125°C |
| Thermal resistance junction-to-case | 4.6°C/W |
| Package | TFLGA-27, 6 x 8 mm |
| RoHS | RoHS compliant |
| Lead Free | Yes |
| Halogen Free | Yes |
No datasheet is available for this part.
