This device integrates two enhancement-mode 650 V CoolGaN transistors in a half-bridge configuration. It provides a typical on-resistance of 140 mΩ, a typical total gate charge of 1.8 nC, and continuous and pulsed drain current ratings of 13.7 A and 23 A at 25°C. The part is housed in a 6 x 8 mm PG-TIQFN-32-1 package and is qualified for industrial applications. It is intended for AC-DC chargers and adapters, low-power motor drives, and lighting designs.
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| Technology | GaN HEMT |
| Configuration | Dual half-bridge |
| Drain-Source Voltage | 650V |
| On-Resistance | 140mΩ |
| Continuous Drain Current | 13.7A |
| Pulsed Drain Current | 23A |
| Total Gate Charge | 1.8nC |
| Package | QFN-32 |
| Package Dimensions | 6 x 8mm |
| Qualification | Industrial |
| Planned Availability | At least 2035 |
| RoHS | Compliant |
| Halogen Free | Yes |
